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| SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 4 - JANUARY 1996 COMPLEMENTARY TYPE - PARTMARKING DETAIL - BCV28 EF BCV29 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P tot T j:T stg VALUE 40 30 10 800 500 1 -65 to +150 UNIT V V V mA mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO MIN. 40 30 10 100 10 100 1 1.5 4000 10000 20000 4000 150 3.5 MHz pF TYP. MAX. UNIT V V V nA A nA V V CONDITIONS. I C=100A I C=10mA* I E=10A V CB=30V V CB=30V, T amb=150C V EB=4V I C=100mA, I B-0.1mA* I C=100mA, I B=0.1mA* I C=100A, V CE=1V I C=10mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V* I C=50mA, V CE=5V f = 20MHz V CB=10V, f=1MHz Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V CE(sat) V BE(sat) Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance fT C obo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical graphs see FMMT38A datasheet Periodic Sample Test Only. Spice parameter data is available upon request for this device 3 - 24 |
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